ZXTP2012Z Zetex Semiconductors plc., ZXTP2012Z Datasheet - Page 4

• Manufacturer Part Number: ZXTP2012Z
• Description: 60v Pnp Low Saturation Medium Power Transistor In Sot89
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTP2012Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
OBO
FE
CBO
CER
CEO
EBO
1k
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
-100
-100
100
100
-60
45
10
-7
-120
-120
-950
-840
TYP.
-8.1
-160
250
120
200
370
-80
-14
-50
-75
48
39
90
25
1
1
1
2%.
-1050
MAX. UNIT CONDITIONS
-950
-0.5
-110
-215
-0.5
-20
-20
-10
-20
300
-65
MHz I
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=-1A, I
=-2A, I
=-5A, I
=-2A, V
=-5A, V
=-10A, V
=-100 A
=-1 A, RB 1k
=-10mA*
=-100 A
=-0.1A, I
=-5A, I
=-5A, V
=-10mA, V
=-100mA, V
=-1A, V
=I
=-80V,T
=-80V,T
=-6V
=-80V
=-80V
=-10V, f=1MHz*
ISSUE 1 - JUNE 2005
B2
=-100mA
B
B
B
CE
CE
B
=-100mA*
=-200mA*
=-500mA*
CE
CC
CE
=-500mA*
amb
amb
B
=-1V*
=-1V*
=-10mA*
=-1V*
=-1V*
=-10V,
CE
CE
=100 C
=100 C
=-1V*
=-10V