BCV27-NL Fairchild Semiconductor, BCV27-NL Datasheet - Page 2

• Manufacturer Part Number: BCV27-NL
• Description: Bcv27 Npn Darlington Transistor
• Manufacturer: Fairchild Semiconductor

h
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
f
C
FE
Symbol
CE(
BE(
CBO
EBO
T
(BR)CEO
(BR)CBO
(BR)EBO
C
Electrical Characteristics
Typical Characteristics
sat
sat
)
)
250
200
150
100
1.6
1.2
0.8
0.4
50
0.001
0
2
0
1
V = 5V
Typical Pulsed Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Voltage vs Collect or Current
CE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Current Gain - Bandwidth Product
Collector Capacitance
= 1000
Base-Emitter Saturation
- 40 °C
vs Collector Current
- 40 °C
I - COLLECTOR CURRE NT (mA)
I - COLLECTOR CURRENT (A)
C
C
0.01
10
Parameter
25 °C
25 °C
125 °C
125 °C
0.1
100
TA = 25°C unless otherwise noted
1000
I
I
I
I
I
1
C
C
C
C
C
I
I
I
V
V
I
f = 100 MHz
V
C
C
E
C
= 1.0 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, I
CB
EB
CB
= 10 mA, I
= 10 A, I
= 100 nA, I
= 30 mA, V
= 30 V, I
= 10 V, I
= 30 V, I
Test Conditions
E
C
CE
B
E
E
B
B
1.6
1.2
0.8
0.4
C
CE
1.6
1.2
0.8
0.4
CE
= 0
CE
= 0
= 0
= 0
= 0, f = 1.0 MHz
= 0.1 mA
= 0.1 mA
0
2
0
= 0
= 5.0 V
= 5.0 V
1
1
= 5.0 V,
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
Base Emitter ON Voltage vs
- 40 °C
= 1000
- 40 °C
I - COLLECTOR CURRE NT (mA)
I - COLLECTOR CURRE NT (mA)
NPN Darlington Transistor
C
C
Collector Current
10
10
25 °C
25°C
10,000
20,000
4,000
Min
30
40
10
125 °C
Typ
100
220
100
3.5
V = 5V
125 °C
CE
Max Units
0.1
0.1
1.0
1.5
(continued)
1000
1000
MHz
pF
V
V
V
V
V
A
A