GSBAT54S GTM, GSBAT54S Datasheet
GSBAT54S
Manufacturer Part Number
GSBAT54S
Description
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Manufacturer
GTM
Datasheet
1.GSBAT54S.pdf
(2 pages)
www.DataSheet4U.com
G
Description
These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping.
Package Dimensions
Absolute Maximum Ratings at Ta = 25 : : : :
Junction Temperature
Storage Temperature
Peak Repetitive Reverse Voltage
Forward Continuous Current
Peak Repetitive Forward Current
Surge Forward Current(t 1.0s)
Total Power Dissipation at Ta = 25 :
Characteristics at Ta = 25 : : : :
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
G
REF.
HE
S
A1
A2
S
D
A
E
B
B
characteristics
Parameter
A
A
Min.
0.80
0.80
1.80
1.15
1.80
T
T
0
Millimeter
5
5
4
4
S U R F A C E M O U N T , S C H O T T K Y B A R R I E R D I O D E
/
/
Max.
1.10
0.10
1.00
2.20
1.35
2.40
A
A
/
/
Symbol
C
C
V
V
V
V
V
V
(BR)R
C
Trr
I
F(1)
F(2)
F(3)
F(4)
F(5)
R
V O L T A G E 3 0 V , C U R R E N T 2 0 0 m A
T
/
/
REF.
Q1
L1
S
S
L
b
c
e
Symbol
Tstg
I
FRM
I
PD
V
Tj
FSM
I
F
R
Min
30
-
-
-
-
-
-
-
-
0.15
0.25
0.10
Min.
0.15
0.42 REF.
0.65 REF.
Millimeter
Max.
1000
BCS.
240
320
400
500
2.0
10
5
-
Max.
0.35
0.40
0.25
Unit
mV
mV
mV
mV
mV
pF
ns
V
-55 ~ +125
-55 ~ +150
A
Ratings
200
300
600
225
30
IR=10 A
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA, IR(Rec)=1mA
Test Conditions
ISSUED DATE :2005/01/05
REVISED DATE :
Unit
mW
mA
mA
mA
V
1/2
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GSBAT54S Summary of contents
Page 1
...
Page 2
... Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. ...