MPS-0810A9-02 MicroWave Technology, Inc., MPS-0810A9-02 Datasheet

MPS-0810A9-02

Manufacturer Part Number

MPS-0810A9-02

Description

800 To 960 Mhz Linear Amplifiers Preliminary Data Sheet

Manufacturer

MicroWave Technology, Inc.

Datasheet

1.MPS-0810A9-02.pdf (2 pages)

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Electrical Specifications

SYMBOL

Freq

SSG

P1 dB

IP3

VSWR

GOF

GOT

Idd

0.9

0.7

1.3

1.7

1.5

1.1

800

Noise Figure @ 25C

840

PARAMETERS

Frequency Range

Small Signal Gain

Pout at 1 dB Comp Point

Third-Order Intercept

Noise Figure

VSWR (Input/Output)

Gain Var. over 40 MHz

Gain Var. over Temp

DC Current

Freq. (GHz)

880

MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538

The MPS-0810A9-02 is a low-noise, high dynamic range amplifier designed for ultra linear

GSM, TDMA, CDMA, NMT-900 and ETACS receiver applications. The circuit is matched to

50 ohm and employs a single stage GaAs FET with internal matching to provide an

exceptional noise figure, 1.1 dB, combined with a high IP3, +34 dBm. Typical applications

are cellular base station receivers, tower mounted LNA's, picocell repeaters and receiver

multi-couplers.

920

Features:

510-651-6700

960

1.1 dB NF

15.0 dB Gain

+20.5 dBm P1dB

1000

FAX

@ 25°C, Vdd = 6.0 V, Zo = 50 ohms

510-651-2208

Maximum Bias Voltage

Maximum Continuous RF Input Power

Maximum Peak Input Power

Maximum Case Operating Temperature

Maximum Storage Temperature

Absolute Maximum Ratings

Min

14.0

800

info@mwtinc.com

800 to 960 MHz Linear Amplifiers

Typical

34 dBm IP3

Single Positive Bias

Leadless Surface Mount Package

-0.015

+20.5

1.5:1

± 0.2

15.0

34.0

160

1.1

MPS-0810A9-02

Preliminary Data Sheet

2.0:1

± 0.5

Max

960

240

1.5

+25 dBm

+27 dBm

+85 °C

- 65 to + 150 °C

7.0 V

dB/°C

Unit

MHz

dBm

Related parts for MPS-0810A9-02

MPS-0810A9-02 Summary of contents

Page 1

... Features: The MPS-0810A9- low-noise, high dynamic range amplifier designed for ultra linear GSM, TDMA, CDMA, NMT-900 and ETACS receiver applications. The circuit is matched to 50 ohm and employs a single stage GaAs FET with internal matching to provide an exceptional noise figure, 1.1 dB, combined with a high IP3, +34 dBm. Typical applications are cellular base station receivers, tower mounted LNA's, picocell repeaters and receiver multi-couplers ...

Page 2

... GROUND PAD Application Circuit C1 100 160 nH CR1 8.0 V 510-651-2208 info@mwtinc.com FAX EMAIL MPS-0810A9-02 800 to 960 MHz Linear Amplifiers Preliminary Data Sheet Return Losses @ 25C 820 860 900 940 980 Freq. (MHz) GAP. .003 TYP. .250 .050 TYP. 8 PLCS. INPUT PAD ...

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