IRH8250 International Rectifier, IRH8250 Datasheet - Page 3

• Manufacturer Part Number: IRH8250
• Description: (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
• Manufacturer: International Rectifier

Table 2. High Dose Rate
Table 3. Single Event Effects
IRH7250, IRH8250 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7250. Post-irradiation limits of the devices
irradiated to 1 x 10
Table 1. Low Dose Rate
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V
I PP
di/dt
L 1
BV
V
I
I
I
R
V
DSS
GSS
GSS
DSS
SD
GS(th)
DS(on)1
DSS
Ion
Cu
Parameter
Drain-to-Source Voltage
Drain-to-Source Breakdown Voltage 200
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
Parameter
(MeV/mg/cm
DS
LET (Si)
bias condition equal to 80% of the
6
Rads (Si) are presented in Table
28
2
)
10
1.0
Min Typ Max Min Typ Max
—
—
—
11
(ions/cm
Fluence
Rads (Si)/sec 10
3x 10
15
—
—
—
5
160
160
—
—
100K Rads (Si) 1000K Rads (Si)
2
Min
)
5
2.0
IRH7250
—
—
—
—
—
Rads
—
—
—
20
0.100
12
Max
-100
100
4.0
1.4
25
—
Rads (Si)/sec
—
15
—
—
1, column 2, IRH8250. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
request basis using a dose rate up to 1 x 10
(Si)/Sec (See Table 2).
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Range
International Rectifier radiation hardened HEXFETs
High dose rate testing may be done on a special
(µm)
43
1.25
Min
200
IRH8250
—
—
—
—
—
160
8.0 A/µsec Rate of rise of photo-current
—
—
0.155
Units
-100
Max
100
4.5
1.4
—
50
µH
V
A
V
Units
Applied drain-to-source voltage during
nA
gamma-dot
Peak radiation induced photo-current
Circuit inductance required to limit di/dt
µA
DS
V
V
(V)
Radiation Characteristics
180
Bias
V
T C = 25°C, I S =26A,V
DS
Test Conditions
Test Conditions
=0.8 x Max Rating, V
V
V
V
GS
GS
GS
= V
V
= 0V, I
V
= 12V, I
GS
GS
DS
= -20 V
, I
= 20V
V
D
D
GS
D
= 1.0mA
= 1.0mA
-5
(V)
= 16A
Bias
GS
GS
12
= 0V
Rads
=0V
3