IRHM7250 International Rectifier, IRHM7250 Datasheet
IRHM7250
Related parts for IRHM7250
IRHM7250 Summary of contents
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... Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight PD - 90674C IRHM7250 JANSR2N7269 200V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ HEXFET TECHNOLOGY TO-254AA Single Event Effect (SEE) Hardened ...
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... IRHM7250, JANSR2N7269 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...
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... V Diode Forward Voltage SD 1. Part number IRHM7250 (JANSR2N7269) 2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. ...
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... IRHM7250, JANSR2N7269 Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Post-Irradiation Pre-Irradiation Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com ...
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... Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 7. Typical Transient Response of Rad Hard HEXFET During 12 1x10 Rad (Si)/Sec Exposure www.irf.com IRHM7250, JANSR2N7269 Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of V GSS Equals 12 Volts During Radiation Fig 8b. V ...
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... IRHM7250, JANSR2N7269 Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si) 6 Radiation Characteristics = 12 Vdc Vdc GS DS Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) ...
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... Radiation Characteristics Pre-Irradiation Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com = 0 Vdc Fig 15. Typical Output Characteristics Pre-Irradiation Fig 17. Typical Output Characteristics IRHM7250, JANSR2N7269 = 160 Vdc Post-Irradiation 100K Rads (Si) Post-Irradiation 1 Mega Rads(Si) 7 ...
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... IRHM7250, JANSR2N7269 Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...
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... Pre-Irradiation Fig 22. Typical CapacitanceVs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com IRHM7250, JANSR2N7269 Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 9 ...
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... IRHM7250, JANSR2N7269 Fig 26. Maximum Drain Current Vs. Case Temperature Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 26a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 26b. Switching Time Waveforms www ...
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... Charge IRHM7250, JANSR2N7269 Fig 28c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 29b ...
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... IRHM7250, JANSR2N7269 Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature 25V, starting 25°C, L= 1.5mH Peak 26A 12V I SD 26A, di/dt 190A 200V 150°C Case Outline and Dimensions — TO-254AA 13.84 ( .545 ) 3.78 ( .149 ) 13.59 ( .535 ) 3 ...