3KBP08M Vishay Siliconix, 3KBP08M Datasheet
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3KBP08M
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3KBP08M Summary of contents
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... V 50 100 RRM RMS V 50 100 DC I F(AV) I FSM STG 3KBP005M thru 3KBP08M www.DataSheet4U.com Vishay General Semiconductor 3KBP 3KBP 3KBP 3KBP 02M 04M 06M 08M 200 400 600 800 140 280 420 560 200 400 600 800 3.0 ...
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... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T TEST PARAMETER CONDITIONS Maximum instantaneous forward 3.0 A voltage drop per diode Maximum DC reverse current ° rated DC blocking voltage T = 125 °C A per diode Typical junction capacitance 4 MHz per diode THERMAL CHARACTERISTICS (T PARAMETER ...
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... MIN. (15.2) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) DIA. 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner 3KBP005M thru 3KBP08M www.DataSheet4U.com Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) 0.500 (12.70) 0.460 (11.68) www.vishay.com 100 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...