BZT55C11 Vishay Telefunken, BZT55C11 Datasheet - Page 3

• Manufacturer Part Number: BZT55C11
• Description: Silicon Epitaxial Planar Z-Diodes
• Manufacturer: Vishay Telefunken

Characteristics (T
Figure 2. Typical Change of Working Voltage under Oper-
Document Number 85601
Rev. 3, 01-Apr-99
95 9602
95 9598
1000
600
500
400
300
200
100
100
10
0
1
Figure 1. Total Power Dissipation vs.
0
0
ating Conditions at T
T
j
= 25 C
T
40
amb
Ambient Temperature
5
– Ambient Temperature ( C )
V
Z
80
10
– Z-Voltage ( V )
j
I
Z
= 25 _ C unless otherwise specified)
=5mA
120
15
amb
=25 ° C
160
20
200
25
95 9599
95 9600
95 9601
Figure 3. Typical Change of Working Voltage vs.
Figure 4. Temperature Coefficient of Vz vs.
200
150
100
Figure 5. Diode Capacitance vs. Z–Voltage
1.3
1.2
1.1
1.0
0.9
0.8
15
10
–5
50
5
0
0
–60
0
0
V
Ztn
=V
10
0
T
Junction Temperature
5
www.vishay.de FaxBack [phone]
j
Zt
– Junction Temperature ( C )
/V
V
V
Z
Z–Voltage
(25 C)
Z
Z
60
20
– Z-Voltage ( V )
10
– Z-Voltage ( V )
Vishay Telefunken
TK
VZ
I
Z
=10 10
=5mA
120
30
15
BZT55C...
–4
/K
T
V
j
= 25 C
R
180
40
20
= 2V
8 10
6 10
4 10
2 10
–2 10
–4 10
0
–4
–4
–4
–4
–4
–4
/K
/K
/K
/K
240
/K
/K
50
25
3 (6)