RF08L6S Rohm, RF08L6S Datasheet - Page 2

• Manufacturer Part Number: RF08L6S
• Description: Super Fast Recovery Diode
• Manufacturer: Rohm

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©2009 ROHM Co., Ltd. All rights reserved.
RF08L6S
1100
1050
1000
0.001
1000
950
900
0.01
100
1.4
1.2
0.8
0.6
0.4
0.2
0.1
80
60
40
20
10
10
0
1
0
1
0
0
1
D=0.05
Tj=150℃
half sin wav e
D=0.1
Tj=125℃
FORWARD CURRENT ： Io(A)
FORWARD VOLTAGE：V
D=0.2
500
0.5
Io-Pf CHARACTERISTICS
V
I
FSM
AVERAGE RECTIFIED
F
-I
V
I
FSM
F
F
-t CHARACTERISTICS
AVE:49.4A
CHARACTERISTICS
DISPERSION MAP
AVE:999.5mV
Tj=75℃
DISRESION MAP
D=0.5
TIME:t(ms)
1000
D=0.8
10
1
Tj=25℃
Ifsm
Ifsm
D.C.
1500
8.3ms
F
(mV)
n=30pcs
1.5
I
Tj=25 ℃
t
F
=0.8A
1cyc
2000
100
2
10000
1000
100
100
0.1
0.1
10
10
60
55
50
45
40
35
30
1
1
30
25
20
15
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
5
0
1
0
0
0
half sin wav e
D=0.5
100
D=0.1
D=0.2
AMBIENT TEMPERATURE:Ta(℃)
AVE：2.70kV
30
REVERSE VOLTAGE：V
C=200pF
V
D.C.
R=0Ω
R
trr DISPERSION MAP
ESD DISPERSION MAP
Derating Curv eﾞ(Io-Ta)
200
-I
I
R
D=0.8
R
DISPERSION MAP
AVE:7.35nA
CHARACTERISTICS
AVE:48.8ns
60
300
Tj=125℃
Tj=75℃
0A
0V
2/2
D=0.0
AVE：9.80kV
90
400
Tj=25℃
t
Tj=150℃
R=1.5kΩ
C=100pF
V
R
n=30pcs
Tj=25℃
(V)
R
T
=600V
Irr=0.25*I
Tj=25℃
I
120
F
500
I
=0.5A
R
V
Tj=150℃
D=t/T
=1A
R
=480V
R
V
Io
600
R
150
100
1000
10
100
1
1000
10
100
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
60
50
40
30
0.1
1
10
0
1
0
1
0.001
1
0
IM=10mA
half sin wav e
D=0.8
5
D.C.
0.01
1ms
I
REVERSE VOLTAGE:V
V
Ct DISPERSION MAP
FSM
30
300us
LEAD TEMPARATURE:Tl(℃)
Rth-t CHARACTERISTICS
R
-Ct CHARACTERISTICS
-CY CLE CHARACTERISTICS
10
D=0.2
Derating Curv eﾞ(Io-Tl)
NUMBER OF CY CLES
time
0.1
AVE:44.2pF
On Glass Epoxi Board
TIME:t(s)
60
Ifsm
I
F
0A
=100mA
15
0V
D=0.5
10
1
D=0.1
8.3ms
t
90
20
R
10
T
f =1MHz
(V)
1cyc
V
Tj=150℃
8.3ms
D=t/T
f=1MHz
Tj=25℃
D=0.05
Rth(j-a)
Rth(j-l)
R
V
25
120
=480V
R
100
=0V
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2009.04 - Rev.A
V
Io
R
100
30
1000
150
Data Sheet