TPCF8102 Toshiba Semiconductor, TPCF8102 Datasheet

no-image

TPCF8102

Manufacturer Part Number
TPCF8102
Description
Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Manufacturer
Toshiba Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCF8102
Manufacturer:
TOSH
Quantity:
22 580
Part Number:
TPCF8102
Manufacturer:
TOSHIBA
Quantity:
3 748
Part Number:
TPCF8102
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TPCF8102(TE85L,F,M
Manufacturer:
TOSHIBA
Quantity:
9 000
Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Please handle with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Characteristics
GS
DC
Pulsed (Note 1)
= 20 kΩ)
(V
(Ta = 25°C)
DSS
th
DS
(Note 2a)
(Note 2b)
= −0.5 to −1.2 V
(Note 1)
(Note 4)
(t = 5 s)
(t = 5 s)
= −10 µA (max) (V
= −10 V, I
(Note 2a)
(Note 2b)
DS (ON)
D
Symbol
fs
TPCF8102
V
V
V
E
E
T
I
T
I
DGR
P
P
| = 14 S (typ.)
= −200 µA)
DSS
GSS
I
DP
AR
AS
AR
stg
D
ch
D
D
= 24 mΩ (typ.)
DS
R
R
Symbol
th (ch-a)
th (ch-a)
= −20 V)
−55~150
Rating
0.25
−20
−20
−24
150
2.5
0.7
5.9
±8
−6
−3
1
178.6
Max
50.0
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
W
V
V
V
A
A
Unit
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
6
3
2-3U1A
TPCF8102
2004-07-06
5
4
Unit: mm

Related parts for TPCF8102

TPCF8102 Summary of contents

Page 1

... − 0. 150 °C ch −55~150 T °C stg Symbol Max Unit R 50.0 °C/W th (ch-a) R 178.6 °C/W th (ch-a) 1 TPCF8102 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Circuit Configuration 2004-07-06 ...

Page 2

... − −6 (Ta = 25°C) Test Condition ⎯ DRP = −6 DSF TPCF8102 Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ −10 µA −20 ⎯ ⎯ V −12 ⎯ ⎯ −0.5 ⎯ −1.2 V ⎯ ...

Page 3

... L = 0.5 mH, R Note Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1. Product-specific code (b) Device mounted on a glass-epoxy board (b) FR-4 Unit: (mm) ( Ω −3 TPCF8102 FR-4 25.4 × 25.4 × 0.8 Unit: (mm) 2004-07-06 ...

Page 4

... Gate-source voltage (ON) 1000 Common source Ta = 25°C Pulse test −1.8 V 100 10 1 −100 −0.1 −1 Drain current I 4 TPCF8102 – Common source Ta = 25°C Pulse test −1.9 −1.8 −1.7 −1.6 −1 −1.4 V −3 −4 −5 (V) DS – V ...

Page 5

... Ambient temperature Ta (°C) 100 Dynamic input/output characteristics −20 − −12 −8 −4 V −4 0 160 Total gate charge Q 5 TPCF8102 – 1.2 1.6 2 (V) DS – 120 160 −20 Common source − 25°C −16 Pulse test − − ...

Page 6

... Curves must be derated linearly with increase in temperature V DSS max −0.1 −0.1 −1 −10 Drain-source voltage V ( – Device mounted on a glass-epoxy board (b) (Note 2b) Device mounted on a glass-epoxy board (a) (Note 2a) 100 100 Pulse width t (s) w −100 6 TPCF8102 1000 2004-07-06 ...

Page 7

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 TPCF8102 030619EAA 2004-07-06 ...

Related keywords