TPCF8102 Toshiba Semiconductor, TPCF8102 Datasheet
TPCF8102
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TPCF8102 Summary of contents
Page 1
... − 0. 150 °C ch −55~150 T °C stg Symbol Max Unit R 50.0 °C/W th (ch-a) R 178.6 °C/W th (ch-a) 1 TPCF8102 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Circuit Configuration 2004-07-06 ...
Page 2
... − −6 (Ta = 25°C) Test Condition ⎯ DRP = −6 DSF TPCF8102 Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ −10 µA −20 ⎯ ⎯ V −12 ⎯ ⎯ −0.5 ⎯ −1.2 V ⎯ ...
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... L = 0.5 mH, R Note Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1. Product-specific code (b) Device mounted on a glass-epoxy board (b) FR-4 Unit: (mm) ( Ω −3 TPCF8102 FR-4 25.4 × 25.4 × 0.8 Unit: (mm) 2004-07-06 ...
Page 4
... Gate-source voltage (ON) 1000 Common source Ta = 25°C Pulse test −1.8 V 100 10 1 −100 −0.1 −1 Drain current I 4 TPCF8102 – Common source Ta = 25°C Pulse test −1.9 −1.8 −1.7 −1.6 −1 −1.4 V −3 −4 −5 (V) DS – V ...
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... Ambient temperature Ta (°C) 100 Dynamic input/output characteristics −20 − −12 −8 −4 V −4 0 160 Total gate charge Q 5 TPCF8102 – 1.2 1.6 2 (V) DS – 120 160 −20 Common source − 25°C −16 Pulse test − − ...
Page 6
... Curves must be derated linearly with increase in temperature V DSS max −0.1 −0.1 −1 −10 Drain-source voltage V ( – Device mounted on a glass-epoxy board (b) (Note 2b) Device mounted on a glass-epoxy board (a) (Note 2a) 100 100 Pulse width t (s) w −100 6 TPCF8102 1000 2004-07-06 ...
Page 7
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 TPCF8102 030619EAA 2004-07-06 ...