TPCF8303 Toshiba Semiconductor, TPCF8303 Datasheet

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TPCF8303

Manufacturer Part Number
TPCF8303
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
This transistor is an electrostatic sensitive device. Please handle with
caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t
Drain power
dissipation
(t
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
5 s) (Note 2a) Single-device value at
5 s) (Note 2b) Single-device value at
please refer to the next page.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Characteristics
DC
Pulse
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
GS
(V
(Ta
DSS
20 k )
th
(Note 2a, 3b, 5)
DS
= −0.45 to −1.2 V
= −10 µA (max) (V
= −10 V, I
25°C)
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(Note 4)
DS (ON)
D
fs
TPCF8303
| = 6.0 S (typ.)
= −200 µA)
Symbol
V
P
P
P
P
V
V
= 58 mΩ (typ.)
E
E
T
T
I
I
DGR
D (1)
D (2)
D (1)
D (2)
DSS
GSS
I
DP
AR
AS
AR
stg
D
ch
DS
= −20 V)
-55~150
1
Rating
1.35
1.12
0.53
0.33
0.58
0.11
-3.0
-1.5
150
-20
-20
-12
8
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 6)
JEDEC
JEITA
TOSHIBA
8
1
8
1
F5C
7
2
2-3U1B
TPCF8303
6
3
2003-07-16
5
4
5
4
Unit: mm

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TPCF8303 Summary of contents

Page 1

... P 1.12 D (2) P 0.53 D (1) (Note 3a) P 0.33 D (2) (Note 0.11 AR (Note 2a, 3b 150 ch T -55~150 stg 1 TPCF8303 Unit JEDEC ― JEITA ― TOSHIBA 2-3U1B W Weight: 0.011 g (typ.) Circuit Configuration °C ° Marking (Note 6) 8 F5C ...

Page 2

... Note 6: Black round marking “●” locates on the left lower side of parts number marking “F5C” indicates terminal No. 1. Symbol Max Unit R 92.6 th (ch-a) (1) (Note 3a) °C/W R 111.6 th (ch-a) (2) R 235.8 th (ch-a) (1) (Note 3a) °C/W R 378.8 th (ch-a) (2) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (Unit: mm) 0.2 mH TPCF8303 FR-4 25.4 25.4 0.8 (Unit: mm) (b) -1.5 A 2003-07-16 ...

Page 3

... V - gs1 Q gd (Ta 25°C) Symbol Test Condition I ― DRP DSF TPCF8303 Min Typ. Max 0 V ― ― ― ― - -20 ― ― -10 ― ― -200 A -0.45 ― -1.2 -1.5 A ― 120 250 -1.5 A ― ...

Page 4

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 4 TPCF8303 2003-07-16 ...

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