TPCF8304 Toshiba Semiconductor, TPCF8304 Datasheet - Page 3

• Manufacturer Part Number: TPCF8304
• Description: Notebook PC Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
V
D
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
GS
= -10 mA, V
= -10 mA, V
= -3.2 A
3
= -3.2 A, V
(Ta = 25°C)
= -30 V, V
= -10 V, I
= -10 V, I
= -10 V, V
= ±16 V, V
= -4.5 V, I
= -10 V, I
∼ − -24 V, V
-10 V
0 V
Test Condition
Test Condition
w
D
D
D
= 10 μs
GS
GS
D
GS
GS
GS
GS
DS
= -1 mA
= -1.6 A
= -1.6 A
―
= -1.6 A
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= -10 V,
= 0 V
I
V
D
DD
= -1.6 A
∼ − -15 V
V
OUT
-0.5
Min
Min
-30
-15
2.9
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Typ.
Typ.
600
5.9
5.3
8.4
1.4
2.7
80
60
60
70
12
34
14
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www.DataSheet4U.com
TPCF8304
2006-11-17
-12.8
Max
Max
-1.2
±10
105
-10
1.2
72
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Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V