TPCP8002 Toshiba Semiconductor, TPCP8002 Datasheet - Page 2

• Manufacturer Part Number: TPCP8002
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
DD
= 16 V, T
Characteristic
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
= 25°C (initial), L = 0.2 mH, R
(a)
25.4 × 25.4 × 0.8t
R
R
Symbol
th (ch-a)
th (ch-a)
Unit : (mm)
FR-4
G
2
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
= 9.1 A
°C/W
°C/W
Unit
(b)
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25.4 × 25.4 × 0.8t
TPCP8002
2007-01-16
Unit : (mm)
FR-4