TPCP8J01 Toshiba Semiconductor, TPCP8J01 Datasheet - Page 3

• Manufacturer Part Number: TPCP8J01
• Description: Multi-chip Device Epitaxial Transistor
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
MOSFET
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current (Pulse) (Note 1)
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
GS
= −5.5 A
3
= −5.5 A, V
 − 10 V
(Ta = 25°C)
= −32 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
∼ − −24 V, V
0 V
Test Condition
Test Condition
w
D
= 10 μs
D
D
D
GS
GS
GS
DS
GS
= −3.0 A
GS
GS
= − 1mA
= −3.0 A
⎯
= −3.0 A
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
V
I
D
DD
= −3.0 A
∼ − −15 V
V
OUT
−0.8
−32
−15
Min
Min
4.8
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1760
Typ.
Typ.
200
210
9.6
2.8
7.2
38
27
12
22
90
34
4.7
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TPCP8J01
2006-11-17
Max
−2.0
Max
−22
±10
−10
1.2
49
35
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Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V