TPCS8104 Toshiba Semiconductor, TPCS8104 Datasheet
TPCS8104
Related parts for TPCS8104
TPCS8104 Summary of contents
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... V DGR GSS 150 ° 150 °C stg 1 TPCS8104 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1B Weight: 0.035 g (typ.) Circuit Configuration 2002-04-05 ...
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... January to December are denoted by letters respectively.) Symbol Max Unit R 114 °C/W th (ch-a) (Note 2a) R 208 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (unit: mm) 0.2 mH TPCS8104 FR-4 25.4 25.4 0.8 (unit: mm) ( 2002-04-05 ...
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... gs1 Q gd (Ta 25°C) Symbol Test Condition I DRP DSF TPCS8104 Min Typ. Max 0.8 2.0 5 5.5 A 8 5710 MHz 560 590 ...
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... Drain-source voltage V 0 0.4 0.3 0.2 0.1 2 Gate-source voltage V 100 0 TPCS8104 I – 2.7 Common source 2.6 Ta 25°C Pulse test 2 2.4 2 – Common source Ta 25°C Pulse test ...
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... C iss 1 oss C rss 0 100 Dynamic Input/Output Characteristics 150 175 TPCS8104 I – Common source Ta 25°C Pulse test 0.4 0.6 0.8 1 Drain-source voltage V ( – Common source V DS ...
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... Safe Operating Area 100 I D max (pulse 0.1 *: Single pulse Ta 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0.01 0 Drain-source voltage Pulse width t ( ms* 100 6 TPCS8104 (2) (1) Single pulse 100 1000 2002-04-05 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 TPCS8104 000707EAA 2002-04-05 ...