RF3100-3 RF Micro Devices, RF3100-3 Datasheet

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RF3100-3

Manufacturer Part Number
RF3100-3
Description
3V 1900MHZ LINEAR AMPLIFIER MODULE
Manufacturer
RF Micro Devices
Datasheet

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RF3100-3
Quantity:
1 348
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RF3100-3K
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RFMD
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RF3100-3K
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Product Description
The RF3100-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V hand-held systems. The device
is manufactured on an advanced Gallium Arsenide Het-
erojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3100-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Optimum Technology Matching® Applied
Rev A2 011017
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
Si BJT
Si Bi-CMOS
VREG
VCC1
RF IN
Functional Block Diagram
1
2
3
ü
GaAs HBT
SiGe HBT
4
2
GaAs MESFET
Si CMOS
7
6
5
GND
RF OUT
VCC2
input
• Designed for Compatibility with Qualcomm
3V 1900MHZ LINEAR AMPLIFIER MODULE
Chipsets
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Input/Output Internally Matched@50
• Single 3V Supply
• 28dBm Linear Output Power
• -141dBm/Hz Noise Power
• 35% Linear Efficiency
• 45mA Idle Current (Low Power Mode)
RF3100-3
RF3100-3 PCBA Fully Assembled Evaluation Board
NOTE: Nominal thickness, 1.55 mm.
0.800 sq
1.700
2.500
Package Style: LGM (6mmx6mm)
typ
3V 1900MHz Linear Amplifier Module
3.000
RF3100-3
0.600
0.100
http://www.rfmd.com
Fax (336) 664 0454
4.390
0.100
Tel (336) 664 1233
Dimensions in mm.
6.0 sq
2-273
2

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RF3100-3 Summary of contents

Page 1

... RF amplifier in dual- mode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3100-3 has a digital control line for low power application to reduce the cur- rent drain. The device is self-contained with 50 and output that is matched to obtain optimum power, effi- ciency, and linearity characteristics ...

Page 2

... RF3100-3 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (P 28dBm) OUT Control Voltage (V ) REG Mode Voltage (V ) MODE 2 Input RF Power Operating Case Temperature Storage Temperature Parameter High Power State (V Low) MODE Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power ...

Page 3

... Voltage 0 MODE V “High” Voltage 2.0 MODE Rev A2 011017 Specification Unit Typ. Max. 3.7 4.2 V 170 240 1 0.5 V 2.85 2.9 V 0.5 V 3.0 V RF3100-3 Condition T =25°C AMB V =Low, V =2.85V MODE REG V =High, V =2.85V MODE REG V =Low, V =Low REG MODE 2-275 2 ...

Page 4

... RF3100-3 Pin Function Description 1 VCC1 First stage collector supply. A low frequency decoupling capacitor (e.g required input internally matched This input is internally AC-coupled. 3 VREG Regulated voltage supply for amplifier bias. In Power Down mode, both V REG 2 4 VMODE For nominal operation (High Power Mode), V set HIGH, devices are turned off to improve efficiency ...

Page 5

... Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 4 strip VREG 4.7 F Rev A2 011017 4.7 F 4.7 F VMODE VCC2 RF3100-3 50 strip J6 RF OUT 2-277 2 ...

Page 6

... RF3100-3 Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” 2 2-278 Evaluation Board Layout Board Size 1.5” x 1.5” Rev A2 011017 ...

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