DS1217M Dallas Semiconducotr, DS1217M Datasheet
DS1217M
Related parts for DS1217M
DS1217M Summary of contents
Page 1
... Rugged and durable Wide operating temperature range DESCRIPTION The DS1217M is a nonvolatile RAM designed for porta- ble applications requiring a rugged and durable pack- age. The Nonvolatile Cartridge has memory capacities from 64K 512K x 8. The cartridge is accessed in continuous 32K byte banks ...
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... A8 through A11) must be executed to guarantee that pattern entry starts with the first set of 3 bits. Each set of address inputs is entered into the DS1217M by executing read cycles.The first eleven cycles must match the exact bit pattern as shown in Table 2. The last five cycles must match the exact bit pattern for address- ...
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... Connection to the cartridge is accomplished via a 28-pin cable con- nected to a 30-contact card edge connector, AMP Part CARTRIDGE NUMBERING Table 1 PART NO. DS1217M 1/2-25 DS1217M 1-25 DS1217M 2-25 DS1217M 3-25 DS1217M 4-25 ADDRESS INPUT PATTERN Table 2 ADDRESS INPUTS ...
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... DS1217M ABSOLUTE MAXIMUM RATINGS* Voltage on Connection Relative to Ground Operation Temperature Storage Temperature * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ...
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... OEW Data Setup Time t DS Data Hold Time From 5V+ 10%) CC MIN TYP MAX UNITS 250 ns 250 ns 125 ns 210 125 250 ns 170 100 100 DS1217M NOTES 030598 5/8 ...
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... DS1217M READ CYCLE ( ADDRESSES OUT WRITE CYCLE 1 (2), (6), ( ADDRESSES OUT D IN WRITE CYCLE 2 (2), ( ADDRESSES COE D OUT D IN 030598 6 ...
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... Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode REC DATA RETENTION TIME MIN TYP MAX UNITS 0 s 100 125 ms MIN TYP MAX UNITS 5 years DS1217M NOTES = NOTES 9 030598 7/8 ...
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... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state in this period. 9. Each DS1217M is marked with a 4-digit date code AABB. AA designates the year of manufacture. BB desig- nates the week of manufacture. The expected t 10 ...