BTA08-200 Sirectifier Semiconductors, BTA08-200 Datasheet - Page 3

• Manufacturer Part Number: BTA08-200
• Description: Discrete Triacs Non-isolated/isolated
• Manufacturer: Sirectifier Semiconductors

3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
100
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig. 2-2: R MS on-s tate current vers us ambient
temperature (printed circuit board F R 4, copper
thicknes s : 35µm ),full cycle.
F ig.
values ).
9
8
7
6
5
4
3
2
1
0
10
1
0
0.5
0
P (W)
IT (R MS ) (A )
IT M (A )
V to = 0.85 V
R d = 50 m
4:
T j max.
1.0
1
(S =0.5c m )
DPA K
O n-s tate
25
(S =1c m )
D PA K
1.5
2
2
2
2
T j=25° C
2.0
Tamb(° C )
3
IT (R MS )(A )
50
V T M(V )
Discrete Triacs(Non-Isolated/Isolated)
T j=T j max
chara cteris tics
2.5
4
3.0
75
5
3.5
6
4.0
BTB/BTA08
100
(ma ximum
4.5
7
125
5.0
8
10
1E +0
90
80
70
60
50
40
30
20
10
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
F ig. 3: R ela tive variation of thermal impedance
vers us puls e duration.
F ig. 5:
number of cycles.
1E -1
1E -2
1E -3
9
8
7
6
5
4
3
2
1
0
0
0
1
IT (R MS ) (A )
IT S M (A )
1E -3
K =[Zth/R th]
R epetitive
T c=100° C
Zth(j-c)
1E -2
S urge peak on-s tate current versus
25
10
1E -1
Number of cycles
Non repetitive
T j initial=25° C
50
T c (° C )
tp(s )
1E +0
75
100
Zth(j-a)
1E +1
100
B TA
t=20ms
One cycle
1E +2 5E +2
B T B
1000
125