TIG002SS Sanyo Semicon Device, TIG002SS Datasheet
TIG002SS
Manufacturer Part Number
TIG002SS
Description
Light-Controlling Strobe Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.TIG002SS.pdf
(3 pages)
www.DataSheet4U.com
Ordering number : ENN7167
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
(Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and emitter.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Cutoff Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
•
•
•
Low-saturation voltage.
4V drive.
Enhansment type.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)CES
V CE (sat)1
V CE (sat)2
V GE (off)
Symbol
Symbol
V CES
V GES
V GES
I GES
I CES
Coes
Cres
Cies
Tstg
I CP
Tch
Light-Controlling Strobe Applications
PW 500 s, duty cycle 0.5%
I C =5mA, V GE =0
V CE =320V, V GE =0
V GE = 6V, V CE =0
V CE =10V, I C =1mA
I C =150A, V GE =4V
I C =60A, V GE =2.5V
V CE =10V, f=1MHz
V CE =10V, f=1MHz
V CE =10V, f=1MHz
TIG002SS
Conditions
Package Dimensions
unit : mm
2203
Conditions
0.595
8
1
1.27
5.0
0.43
4
5
[TIG002SS]
min
400
0.5
41002 TS IM TA-3515
Ratings
typ
Ratings
3300
TIG002SS
4.2
2.4
75
40
0.2
N-Channel IGBT
--40 to +150
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
max
400
150
150
100
1.2
5.5
3.4
10
6
8
No.7167-1/3
Unit
Unit
nA
pF
pF
pF
V
V
V
A
V
V
V
V
C
C
A
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TIG002SS Summary of contents
Page 1
... Output Capacitance Reverse Transfer Capacitance (Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and emitter. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage ...
Page 2
... Gate-to-Emitter Voltage (off 1.2 1.0 0.8 0.6 0.4 0.2 0 --50 -- Case Temperature TIG002SS = IT04213 I C =150A 120A 90A 60A IT04215 V CE =10V I C =1mA 50 75 100 125 150 IT04217 180 Tc= =5V ...
Page 3
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. TIG002SS Tc= ...