TIG030TS Sanyo Semicon Device, TIG030TS Datasheet
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TIG030TS
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TIG030TS Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TIG030TS SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...
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... Note1. Gate Series Resistance R G ≥50Ω is recommended for prolection purpose at the time of turn OFF. However, if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation <50Ω can also be used. Note2. The collector voltage gradient must be smaller than 400V / µs to protect the device when it is turned off. TIG030TS Symbol Conditions ...
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... Gate-to-Emitter Voltage 6.0 Tc=75 °C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 Gate-to-Emitter Voltage (off 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 --50 -- Case Temperature °C TIG030TS 2.5 3.0 3.5 4.0 4.5 5.0 IT11955 IT11957 IT11959 V CE =10V I C =1mA 50 75 100 125 150 IT11961 200 Tc=25 °C 180 V CE =5V 160 140 ...
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... Gate-to-Emitter Voltage Note : TIG030TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...