TIG062E8 Sanyo Semicon Device, TIG062E8 Datasheet

TIG062E8

Manufacturer Part Number

TIG062E8

Description

N-Channel IGBT

Manufacturer

Sanyo Semicon Device

Datasheet

1.TIG062E8.pdf (5 pages)

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Ordering number : ENA1480A

TIG062E8

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Marking : ZC

* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage (DC)

Gate-to-Emitter Voltage (Pulse)

Collector Current (Pulse)

Maximum Collector-to-Emitter dv / dt

Channel Temperature

Storage Temperature

•

Low-saturation voltage.

Low voltage drive (3V).

Enhansment type.

Built-in Gate-to-Emitter protection diode.

Mounting Height 0.9mm, Mounting Area 8.12mm

dv / dt guarantee*.

Halogen free compliance.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

V CES

V GES

I CP 1

I CP 2

I CP 3

dV CE / dt

Tch

Tstg

Symbol

N-Channel IGBT

Light-Controlling Flash Applications

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤1ms

C M =150μF, V GE =3V

C M =100μF, V GE =3.3V

C M =100μF, V GE =4V

V CE ≤320V, starting Tch=25°C

TIG062E8

O2109 TK IM TC-00002170 / 61009PJ MS IM TC-00001992

Conditions

DATA SHEET

Ratings

-40 to +150

400

100

130

150

400

150

±6

±8

No. A1480-1/5

V / μs

Unit

°C

Datasheet pdf - http://www.DataSheet4U.net/

Related parts for TIG062E8

TIG062E8 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TIG062E8 SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...

Page 2

... V CE =10V, f=1MHz Coes V CE =10V, f=1MHz Cres V CE =10V, f=1MHz Electrical Connection 0. 0. Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 TIG062E8 Ratings min typ max 400 10 ±10 0.4 0 2400 Emitter 2 : Emitter ...

Page 3

... Case Temperature °C Cies, Coes, Cres -- 1000 100 Collector-to-Emitter Voltage TIG062E8 IT14698 I C =100A IT14700 100 50 75 125 150 IT14702 f=1MHz Cies 8 10 ...

Page 4

... Gate-to-Emitter Voltage 300 250 200 Tc=70 ° C 150 100 =3. =320V Collector Current (Pulse) TIG062E8 Test circuit Fig = =320V I CP =100A C M =150μF PW=50μ 1000 IT14706 Tc=70 ° ...

Page 5

... Note : TIG062E8 has protection diode between gate and emitter but handling it requires sufﬁ cient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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