TIG064E8 Sanyo Semicon Device, TIG064E8 Datasheet

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TIG064E8

Manufacturer Part Number
TIG064E8
Description
N-Channel IGBT
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet.co.kr
Ordering number : ENA1602
TIG064E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Marking : ZD
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Low-saturation voltage.
Low voltage drive (2.5V).
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Mounting Height 0.9mm, Mounting Area 8.12mm
dv / dt guarantee*.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
V CES
V GES
V GES
I CP
dV CE / dt
Tch
Tstg
Symbol
N-Channel IGBT
Light-Controlling Flash Applications
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤1ms
V GE =2.5V, C M =100μF
V CE ≤320V, starting Tch=25°C
TIG064E8
2
.
Conditions
N1809PJ TK IM TC-00002186
DATA SHEET
Ratings
-40 to +150
400
150
400
150
±4
±5
No. A1602-1/5
V / μs
Unit
°C
°C
A
V
V
V
Datasheet pdf - http://www.DataSheet4U.net/

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TIG064E8 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TIG064E8 SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...

Page 2

... V CE =10V, f=1MHz Coes V CE =10V, f=1MHz Cres V CE =10V, f=1MHz Electrical Connection 0. 0. Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 TIG064E8 Ratings min typ max 400 10 ±10 0.4 0.9 4.2 7 3100 Emitter 2 : Emitter ...

Page 3

... Gate-to-Emitter Voltage 1.0 1.5 2.0 2.5 Gate-to-Emitter Voltage (off 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50 -- Case Temperature ° C TIG064E8 Tc=25 ° IT15154 Tc= --25 ° C 3.0 3.5 4.0 4.5 5.0 IT15156 Tc= 75 ° C 3.0 3.5 4.0 4.5 5.0 IT15158 V CE =10V I C =1mA 1000 50 75 100 125 150 IT15160 ...

Page 4

... Gate Series Resistance Ω 300 250 Tc=70 ° C 200 150 100 Collector Current (Pulse TIG064E8 Switching test circuit Fig =2. =320V R G =180Ω =100μF PW=50μ 100 IT15162 Switching test circuit Fig =2. =320V I CP =150A C M =100μ ...

Page 5

... Note : TIG064E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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