TIG065E8 Sanyo Semicon Device, TIG065E8 Datasheet

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TIG065E8

Manufacturer Part Number
TIG065E8
Description
N-Channel IGBT
Manufacturer
Sanyo Semicon Device
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIG065E8-TL-E
Manufacturer:
SPANSION
Quantity:
2 000
Part Number:
TIG065E8-TL-H
Manufacturer:
ON
Quantity:
94 200
www.DataSheet.co.kr
Ordering number : ENA1862
TIG065E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
Halogen free compliance
1
8
Parameter
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
V CES
V GES
V GES
I CP
dv / dt
Tch
Tstg
Symbol
0 t o 0.02
N-Channel IGBT
Light-Controlling Flash Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤1ms
V GE =2.5V, C M =100μF
V CE ≤320V, starting Tch=25°C
TIG065E8
2
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3000 pcs./reel
Packing Type: TL
Electrical Connection
Low voltage drive (2.5V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Conditions
8
1
TL
7
2
6
3
DATA SHEET
N2410PJ TKIM TC-00002514
5
4
: ECH8
: -
Marking
Ratings
LOT No.
ZE
-40 to +150
400
150
400
150
±4
±5
No. A1862-1/6
V / μs
Unit
°C
°C
A
V
V
V
Datasheet pdf - http://www.DataSheet4U.net/

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TIG065E8 Summary of contents

Page 1

... Concerning (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1. Package Dimensions unit : mm (typ) 7011A-004 Top View 2 0.65 0.3 Bot t om View TIG065E8 SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications Low voltage drive (2.5V) • Built-in Gate-to-Emitter protection diode • guarantee* • Symbol Conditions ...

Page 2

... V GE =±4V = (off =10V =1mA V CE (sat =100A =2.5V Cies V CE =10V, f=1MHz Coes V CE =10V, f=1MHz Cres V CE =10V, f=1MHz TIG065E8 V GE 100kΩ IT16024 Ratings min typ max 400 0 ...

Page 3

... Case Temperature ° Time -- I CP 10000 1000 100 Collector Current (Pulse TIG065E8 Tc= --25 ° C 2.5 3.0 3.5 4.0 4.5 5.0 IT16026 Tc=75 ° C 2.5 3.0 3.5 4.0 4.5 5.0 IT16028 10000 V CE =10V I C =1mA 1000 50 75 100 125 150 IT16030 10000 Switching test circuit Fig ...

Page 4

... Collector Current (Pulse Turn OFF I C 500 400 300 200 100 Turn OFF Collector Current, Turn OFF TIG065E8 Switching test circuit Fig =2. =320V I CP =150A 200 250 300 350 IT16103 V CE =320V V GE =2.5V Tc=25 ° C ...

Page 5

... Δ t= Δ /100ns Overall waveform V Defi nition of Switching Time :10 TIG065E8 Enlarged picture of turn-off period Turn-off period Turn off V CE Turn off :90 :90 :10 (on (off) Δ ...

Page 6

... Note : TIG065E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

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