GT6301K GTM, GT6301K Datasheet - Page 2

• Manufacturer Part Number: GT6301K
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Notes: 1. Pulse width limited by Max. junction temperature.
GT6301K
2. Pulse width 300us, duty cycle 2% .
3. Surface mounted on 1 in
Parameter
Parameter
2
2
2
2
copper pad of FR4 board t 5sec ; 180 : /W when mounted on Min. copper pad.
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
/
Tj
Min.
Min.
0.5
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.06
Typ.
600
0.5
0.5
12
10
56
29
32
1
8
6
-
-
-
-
-
-
-
-
-
Max.
Max.
±10
100
1.5
1.6
1.2
50
1
1
2
3
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
mS
uA
uA
uA
nC
pF
ns
V
V
V
V
Reference to 25 : , I
V
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
D
D
S
GS
DS
DS
GS
DS
DS
GS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=600mA
=600mA
=1.2A, V
=52
=3.3
=0, I
=V
=10V, I
= ±16V
=30V, V
=24V, V
=10V, I
=4.5V, I
=2.7V, I
=50V
=4.5V
=30V
=10V
=0V
=25V
Test Conditions
Test Conditions
ISSUED DATE :2006/01/09
REVISED DATE :
GS
D
, I
=250uA
GS
D
D
D
D
D
GS
GS
=600mA
=500mA
=250uA
=400mA
=200mA
=0V
=0
=0
Page: 2/4
D
=1mA