BSS135 Siemens Semiconductor Group, BSS135 Datasheet - Page 3

• Manufacturer Part Number: BSS135
• Description: SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics (cont’d)
at
Parameter
Reverse Diode
Continuous reverse drain current
T
Pulsed reverse drain current
T
Diode forward on-voltage
I
V
Range of
Threshold voltage selected in groups
1) A specific group cannot be ordered separately.
Semiconductor Group
F
A
A
GS(th)
= 0.16 A,
T
= 25 ˚C
= 25 ˚C
Each reel only contains transistors from one group.
j
= 25 ˚C, unless otherwise specified.
Grouping
V
GS(th)
V
GS
= 0
P
R
S
T
U
V
W
1)
:
Symbol
V
V
GS(th)
GS(th)
Symbol
I
I
V
S
SM
SD
3
min.
–
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
Limit Values Unit
min.
–
–
–
max.
0.15
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
V
V
V
V
V
V
V
V
typ.
–
–
0.80
Values
Test Condition
–
V
V
I
D
DS1
DS2
= 1 mA
max.
0.080
0.240
1.30
= 0.2 V;
= 3 V;
BSS 135
Unit
A
V