FDS6990 Fairchild Semiconductor, FDS6990 Datasheet - Page 4

• Manufacturer Part Number: FDS6990
• Description: Dual N-Channel Logic Level PowerTrenchTM MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
0.01
R
I
0.1
D
SINGLE PULSE
DS(ON)
R
0.0001
1
= 10A
JA
V
T
GS
A
3
= 135
= 25
LIMIT
= 10V
o
o
D = 0.5
C/W
C
V
0.2
0.1
0.05
DS
6
0.02
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
SINGLE PULSE
DC
0.001
9
10s
1s
100ms
Figure 11. Transient Thermal Response Curve.
12
10ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1ms
10
V
DS
15
0.01
100 s
= 5V
15V
18
10V
100
21
0.1
t
1
, TIME (sec)
2000
1600
1200
50
40
30
20
10
800
400
0
0.001
0
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
0.01
5
V
D S
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
C
C
1
C
, TIME (sec)
OSS
RSS
ISS
1
15
P(pk)
Duty Cycle, D = t
T
10
R
R
J
20
SINGLE PULSE
R
100
JA
- T
JA
JA
T
(t) = r(t) + R
A
A
t
= 135°C/W
= 135 °C/W
1
= 25°C
= P * R
t
2
V
f = 1MHz
100
GS
25
= 0 V
FDS6990S Rev B (W)
JA
1
(t)
JA
/ t
2
1000
1000
30