NDS356 Fairchild, NDS356 Datasheet - Page 4

• Manufacturer Part Number: NDS356
• Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild

Typical Electrical Characteristics
-10
-8
-6
-4
-2
0
-5
-4
-3
-2
-1
1.6
1.4
1.2
0.8
0.6
0
0
-1
1
-50
V
Figure 1. On-Region Characteristics
DS
V
Figure 5. Transfer Characteristics
Figure 3. On-Resistance Variation
V
GS
I = -1.1A
D
= -10V
GS
-25
= -10V
= -4.5V
-1
V
V
-2
DS
GS
T , JUNCTION TEMPERATURE (°C)
0
with Temperature
J
, DRAIN-SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
-7.0
-2
25
-6.0
-3
-5.5
50
T
-3
J
-5.0
= -55°C
75
-4.5
.
-4.0
-4
100
-4
25°C
-3.5
125°C
-3.0
.
125
.
-5
150
-5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1.2
1.1
0.9
0.8
0.7
0
2
1
1
V
0
-50
GS
V
GS
= -3.5 V
with Drain Current and Gate Voltage
Figure 6. Gate Threshold Variation
= -4.5V
with Drain Current and Temperature
Figure 2. On-Resistance Variation
-25
Figure 4. On-Resistance Variation
T = 125°C
-2
J
-2
-4.0
0
T , JUNCTION TEMPERATURE (°C)
J
I , DRAIN CURRENT (A)
with Temperature
D
I
D
-4
, DRAIN CURRENT (A)
-4.5
2 5
-5.0
25°C
-4
5 0
-5.5
-6
7 5
-55°C
-6.0
.
-6
I
1 0 0
-7.0
D
-8
V
DS
=- 250µA
= V
1 2 5
-10
GS
.
NDS356AP Rev.C
.
-10
-8
1 5 0
1