FODM8801X Fairchild Semiconductor, FODM8801X Datasheet - Page 3

• Manufacturer Part Number: FODM8801X
• Manufacturer: Fairchild Semiconductor

©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.0.8
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Isolation Characteristics
Notes:
1. Derate linearly from 73˚C at a rate of 0.24mW/˚C
2. Derate linearly from 73˚C at a rate of 2.23mW/˚C.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions
4. Device is considered a two terminal device: Pins 1 and 2 are shorted together and Pins 3 and 4 are shorted together.
5. 3,750 VAC
TOTAL PACKAGE
EMITTER
DETECTOR
Symbol
outside these ratings.
R
C
V
I
I
ISO
ISO
ISO
Symbol
C(average)
F(average)
Symbol
PD
V
V
V
T
T
T
PD
FL(OFF)
V
OPR
CEO
ECO
STG
T
SOL
I
LED
T
R
FH
J
C
A
RMS
Input-Output Isolation Voltage f = 60Hz, t = 1min., I
Isolation Resistance
Isolation Capacitance
for 1 minute duration is equivalent to 4,500 VAC
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
(Refer to Reflow Temperature Profile on page 11)
Continuous Forward Current
Reverse Input Voltage
Power Dissipation
Continuous Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Power Dissipation
Parameter
Operating Temperature
Input Low Voltage
Input High Forward Current
(1)(3)
(T
A
Parameter
V
Freq. = 1MHz
= 25°C unless otherwise specified)
Parameter
I-O
(2)(3)
= 500V
Test Conditions
(4)
RMS
3
for 1 second duration.
I-O
≤ 10µA
(4)(5)
260 for 10 sec.
3,750
Min.
10
-40 to +150
-40 to +125
-40 to +140
12
Value
-40 to +125
150
-5 to 0.8
20
40
30
75
1 to 10
6
7
Value
Typ.
0.3
Max.
0.5
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Units
mW
mW
mA
mA
°C
°C
°C
°C
Units
V
V
V
mA
°C
Vac
V
Unit
pF
Ω
RMS