STC08IE120HP ST Microelectronics, STC08IE120HP Datasheet - Page 4

• Manufacturer Part Number: STC08IE120HP
• Description: Emitter Switched Bipolar Transistor
• Manufacturer: ST Microelectronics

Electrical characteristics
2
4/11
(T
Table 3.
Electrical characteristics
Symbol
V
V
V
V
case
Q
I
I
I GS(OS)
V
I
BS(OS)
SB(OS)
V
CS(SS)
CS(dyn)
CS(dyn)
CS(ON)
BS(ON)
C
GS(tot)
GS(th)
h
CSW
ISS
t
t
FE
t
t
s
s
f
f
= 25°C unless otherwise specified)
Collector-source current
(V
Base-source current
(I
Source-base current
(I
Gate-source leakage
Collector-source ON
voltage
DC current gain
Base Source ON voltage
Gate threshold voltage
Input capacitance
Gate-source charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Maximum collector-
source voltage switched
without snubber
Collector-source
dynamic voltage
(500ns)
Collector-source
dynamic voltage
(1 µs)
Electrical characteristics
C
C
BS
= 0, V
= 0, V
= V
Parameter
GS
GS
GS
= 0)
= 0)
= 0)
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
t
I
V
t
R
V
R
I
V
R
I
C
p
C
p
Bpeak
Bpeak
CE
BS(OS)
SB(OS)
GS
GS
GS
GS
GS
GS
GS
BS
CS
GS
GS
Clamp
Clamp
CC
CC
G
G
G
= 4
= 4
= 4A
= 4A
=
=
= 47Ω h
= 1200V
= V
= 25V ______f = 1MHz
=
= 10V _I
=
=
=
=
=
= 0
= 10V
= V
= V
µs
µs
47Ω
47Ω
= 4A
= 4A
±
10V_
10V_
10V_
10V_
10V_
= 960V
= 960V
GS
Test Conditions
Clamp
Clamp
= 30V
= 17V
17V
I
I
______I
B
B
I
I
I
I
= 0.8A V
= 0.4A V
I
C
C
C
C
I
I
C
C
= 400V V
= 400V V
C
C
t
t
FE
peak
peak
= 8A
=
= 8A
=
= 8A
= 4A
= 4A
= 4A
4A_
4A_
R
R
= 5A I
G
G
B
= 500
= 500
= 250
= 47Ω
= 47Ω
GS
GS
I
I
B
B
I
I
I
V
V
I
GS
B
GS
B
B
B
= 1.6A
= 0.4A
C
ns
ns
CS
CS
= 10V
= 10V
= 0.8A
= 0.8A
= 1.6A
= 0.4A
µ
= 8A
= 10V
= 10V
= 1V
= 1V
A
1200
Min.
5
7
2
Typ. Max. Unit
10.2
5.75
3.35
550
670
340
0.8
0.5
1.5
1.5
26
15
3
STC08IE120HP
100
100
100
1.2
10
1
4
µA
µA
µA
nC
nA
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
V