STS11NF3LL ST Microelectronics, STS11NF3LL Datasheet - Page 2

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STS11NF3LL

Manufacturer Part Number
STS11NF3LL
Description
N-CHANNEL PowerMESH MOSFET
Manufacturer
ST Microelectronics
Datasheet

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STS11NF3LL
THERMAL DATA
(*) Mounted on FR-4 board (t
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/6
V
Symbo l
Symbo l
Symbo l
R
R
V
g
(BR)DSS
I
C
thj -amb
I
I
T
DS(on)
C
C
GS(th)
D(o n)
f s
GSS
DSS
T
s tg
os s
rss
iss
( )
j
(*)Thermal Resistance Junction-ambient
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Maximum Operating Junction T emperature
Storage Temperature
Parameter
Parameter
Parameter
DS
= 0)
sec)
GS
= 0)
I
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
= V
= 25 V
= 10 V
= Max Rating
= Max Rating
=
= 10 V
= 4.5 V
> I
> I
case
D(o n)
D(o n)
GS
20 V
= 25
Test Con ditions
Test Con ditions
Test Con ditions
x R
x R
I
D
f = 1 MHz
V
o
= 250 A
DS(on )ma x
DS(on )ma x
C unless otherwise specified)
GS
I
I
D
D
= 5.5 A
= 5.5 A
= 0
T
V
c
I
GS
D
= 125
= 5.5 A
= 0 V
o
C
Min.
Min.
Min.
30
11
1
-65 to 150
0.009
0.011
1700
Typ.
Typ.
Typ.
150
500
115
50
20
0.011
0.013
Max.
Max.
Max.
10
100
1
o
Unit
Unit
Unit
C/W
nA
pF
pF
pF
o
o
V
V
A
S
C
C
A
A

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