STS3DPFS30 ST Microelectronics, STS3DPFS30 Datasheet
STS3DPFS30
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STS3DPFS30 Summary of contents
Page 1
... RRM F(MAX) 30V 0.51V Parameter = 100 =125 L =0.5 tp Sinusoidal tp=2 s F=1 kHz tp=100 s STS3DPFS30 PRELIMINARY DATA SO-8 INTERNAL SCHEMATIC DIAGRAM Value 1 Value 10000 Unit Unit ...
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... STS3DPFS30 THERMAL DATA R (*) Thermal Resistance Junction-ambient MOSFET thj-amb R (*) Thermal Resistance Junction-ambientSCHOTTKY thj-amb T Storage Temperature Range stg T Junction Temperature j (*) mounted on FR-4 board (steady state) MOSFET ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage ...
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... Test Conditions 125 = 125 STS3DPFS30 Min. Typ. Max 4.2 5.8 Min. Typ. Max Min. Typ. Max 2.6 Min. Typ. Max. =30V 0.2 =30V 0.03 100 0 ...
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... STS3DPFS30 DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 4/5 SO-8 MECHANICAL DATA mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 1.27 3.81 4.0 1.27 0.6 8 (max.) inch MIN. TYP. MAX. 0.068 0.003 0.009 0.064 0.025 0.033 0.013 0.018 0.007 0.010 0.010 0.019 0.188 0.196 0.228 0.244 0.050 0.150 0.14 0.157 0.015 ...
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