SSM3K16FV Toshiba Semiconductor, SSM3K16FV Datasheet - Page 3

• Manufacturer Part Number: SSM3K16FV
• Description: Silicon N Channel MOS Type High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

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250
200
150
100
12
10
50
0
8
6
4
2
0
8
6
4
2
0
−25
0
1
10
Common source
4
0
V GS = 1.5 V, I D = 1 mA
Drain-Source voltage V DS (V)
V GS = 1.5 V
3
Ambient temperature Ta (°C)
0.5
2.5
Drain current I D (mA)
25
2.3
10
2.5 V, 10 mA
R
R
DS (ON)
DS (ON)
2.1
I
50
D
2.5 V
– V
4 V
1
DS
75
– Ta
– I
4 V, 10 mA
D
100
Common source
Ta = 25°C
100
Common source
Ta = 25°C
1.5
V GS = 1.3 V
125
1.9
1.7
1.5
1000
150
2
3
1000
0.01
100
0.1
1.6
1.2
0.8
0.4
10
−25
1
6
5
4
3
2
1
0
2
0
0
0
Common source
V DS = 3 V
Common source
I D = 0.1 mA
V DS = 3 V
25°C
0
Ta = 100°C
Gate-Source voltage V GS (V)
Gate-Source voltage V GS (V)
2
Ambient temperature Ta (°C)
25
1
R
DS (ON)
4
−25°C
I
50
V
D
−25°C
th
– V
25°C
Ta = 100°C
– Ta
GS
– V
75
6
GS
Common source
I D = 10 mA
2
100
SSM3K16FV
8
125
2007-11-01
150
10
3