SSM3K16TE Toshiba Semiconductor, SSM3K16TE Datasheet

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... SSM3K16TE = 2 1 Symbol Rating Unit ± GSS I 100 200 DP P 100 mW D °C T 150 ch T -55~150 °C stg Equivalent Circuit SSM3K16TE Unit: mm JEDEC ― JEITA ― TOSHIBA 2-1B1B Weight: 2.2 mg (typ.) 2002-01-17 ...

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... 0~2 off ( OUT R L (c) V OUT V DD requires higher voltage than V GS (on) GS (off) recommended voltage of 1 higher to turn SSM3K16TE Min Typ. Max ¾ ¾ ±1 ¾ ¾ 20 ¾ ¾ 1 ¾ 0.6 1.1 ¾ ¾ 40 ¾ 1.5 3.0 ¾ 2.2 4.0 ¾ ...

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... Gate-Source voltage V GS (V) 2 Common source 0 1.6 1.2 0.8 0.4 0 -25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K16TE I – -25° – (ON) GS Common source 100°C 25°C -25° – ...

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... Drain-Source voltage V DS (V) 5000 3000 t off 1000 500 t f 300 100 100 10 0.1 160 4 SSM3K16TE I – -0.4 -0.6 -0.8 -1 -1.2 -1.4 t – Common source 0~2 25° 100 Drain current I D (mA) 2002-01-17 ...

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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 SSM3K16TE 000707EAA 2002-01-17 ...