SSM6J53FE Toshiba Semiconductor, SSM6J53FE Datasheet - Page 3

• Manufacturer Part Number: SSM6J53FE
• Description: High Current Switching Applications
• Manufacturer: Toshiba Semiconductor

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450
400
350
300
250
200
150
100
400
300
200
100
50
0
0
0
0
-3.5
-2.5
-1.5
-0.5
-4
-3
-2
-1
Common Source
Ta = 25 °C
0
0
Gate - Source voltage V
-4 V
Drain - Source voltage V
-2
-1
Drain current I
-0.5
R
R
DS (ON)
DS (ON)
-1.8 V
V GS = -1.5 V
25 °C
-2.5 V
-2
I
D
-1.8 V
-2.5 V
-4
– V
– V
– I
-1
D
D
DS
GS
VGS = -1.2 V
(A)
GS
I D = -0.1 A
Common Source
-3
-6
Common Source
Ta = 25°C
DS
Ta = 85 °C
−25 °C
-1.5
(V)
-1.5 V
(V)
-4
-8
-2
3
-10000
-1000
-0.01
-100
-0.1
400
300
200
100
-10
500
400
300
200
100
-1
0
−50
0
0
0
Common Source
V DS = -3 V
Common Source
-0.2
Gate - Source voltage V
Gate - Source voltage V
Ambient temperature Ta (°C)
Ta = 85 °C
-1.0 A / -1.8 V
-0.4
-2
0
R
-0.6
DS (ON)
R
DS (ON)
I
-1.0 A / -2.5 V
25 °C
D
I D = -0.1 A / V GS = -1.5 V
−25 °C
– V
-0.8
50
-4
GS
– V
25 °C
– Ta
-1.0
GS
I D = -1.0 A
Common Source
GS
GS
100
-1.2
-6
SSM6J53FE
Ta = 85 °C
(V)
(V)
−25 °C
-1.4
2007-11-01
-1.6
150
-8