SSM6L05FU Toshiba Semiconductor, SSM6L05FU Datasheet

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... Rating Unit − ± GSS −200 −400 I DP (Q1, Q2 common) (Ta = 25°C) Symbol Rating Unit P (Note 1) 300 150 °C ch −55~150 T °C stg 2 × SSM6L05FU www.DataSheet4U.com Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) 2007-11-01 ...

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... 100 mA 0~2 off (Q1: Nch MOS FET) ( OUT OUT V DS (ON) 2 SSM6L05FU www.DataSheet4U.com Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.6 1.1 ⎯ ⎯ (Note2) 350 ⎯ (Note2) 0.6 0.8 ⎯ (Note2) ...

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... GS off (Q2: Pch MOS FET) ( OUT −2 ( OUT DS (ON) requires higher voltage than V GS (on) GS (off) 3 SSM6L05FU www.DataSheet4U.com = 100 μA for this D and V requires lower th GS (off) < (on) Min Typ. Max ⎯ ⎯ ±1 −20 ⎯ ...

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... Common Source 3000 Ta = 25°C 2.5 V 1000 500 300 100 100 125 150 10 4 SSM6L05FU www.DataSheet4U.com I – 100°C 25°C −25°C 0.5 1.0 1.5 2.0 2.5 3.0 Gate-Source voltage V GS (V) R – (ON) GS Common Source 200 100°C 25° ...

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... Drain current I D (mA) 100 Common Source MHz Ta = 25°C 1 0.1 −1.0 −1.2 −1.4 Common Source 0~2 25°C 100 300 5 SSM6L05FU www.DataSheet4U.com C – iss C oss C rss 0 Drain-Source voltage V DS (V) 2007-11-01 ...

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... Common Source −3 V 500 Ta = 25°C 300 100 50 30 −10 100 125 150 6 SSM6L05FU www.DataSheet4U.com I – 100°C 25°C −25°C −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 Gate-Source voltage V GS (V) R – (ON) ...

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... Ta = 25°C 1 −0.1 1.0 1.2 1.4 400 Common Source − 0~−2.5 V 300 Ta = 25°C 200 100 −100 −300 SSM6L05FU www.DataSheet4U.com C – iss C oss C rss −0.3 −1 −3 −10 −30 Drain-Source voltage – Mounted on FR4 board. (25.4 mm × 25.4 mm × 1 × ...

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... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 SSM6L05FU www.DataSheet4U.com 20070701-EN GENERAL 2007-11-01 ...