AO4609 Alpha & Omega Semiconductors, AO4609 Datasheet

no-image

AO4609

Manufacturer Part Number
AO4609
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4609
Manufacturer:
PJ
Quantity:
18
Part Number:
AO4609A/
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4609L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent R
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
S2
G2
S1
G1
A
SOIC-8
DS(ON)
1
2
3
4
8
7
6
5
and low gate charge.
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
DS
GS
D
J
Features
n-channel
V
I
R
< 18mΩ (V
< 28mΩ (V
, T
D
DS
DS(ON)
= 8.5A
STG
(V) = 30V
n-channel
G2
Symbol
GS
GS
Max n-channel
R
R
R
R
=10V)
=4.5V)
θJA
θJL
θJA
θJL
-55 to 150
D2
S2
1.28
±20
8.5
6.6
30
40
2
R
Device
DS(ON)
-3A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
-30V
p-channel
< 260mΩ (V
< 130mΩ (V
< 180mΩ (V
p-channel
G1
Max p-channel
Typ
D1
S1
-55 to 150
48
74
35
56
81
40
GS
GS
GS
1.28
-2.4
±12
-30
= 2.5V)
-3
-6
= 10V)
= 4.5V)
2
July 2003
Max Units
62.5 °C/W
62.5 °C/W
110
110
40
48
Units
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

Related parts for AO4609

AO4609 Summary of contents

Page 1

... AO4609 Complementary Enhancement Mode Field Effect Transistor General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent R and low gate charge. DS(ON) The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications ...

Page 2

... AO4609 N-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4609 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 4

... AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 10V 25 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 5

... AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =8. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1 =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=T /( ...

Page 6

... AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 V =-2.5V GS 200 150 V 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 200 150 100 (Volts) GS Figure 5: On-Resistance vs ...

Page 7

... AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25°C A 10.0 R DS(ON) limited 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Page 8

... LOGO - AOS LOGO 4609 - PART NUMBER CODE. LOGO FAB LOCATION A - ASSEMBLY LOCATION YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4609 4609 SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS MIN NOM MAX MIN A 1.45 1.50 1.55 0.057 A1 0.00 0.10 0.000 A2 1 ...

Page 9

ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

Page 10

... LOGO - AOS LOGO 4609 - PART NUMBER CODE. F&A - FOUNDRY AND ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE PART NO. DESCRIPTION CODE 4609 Standard product AO4609 Green product 4609 AO4609L Document No. Version AO4609 Marking Description Title Green product PD-00064 rev C ...

Page 11

GAUGE PLANE SEATING PLANE ...

Page 12

ALPHA & OMEGA SEMICONDUCTOR, LTD. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

Related keywords