AO4800 Alpha Industries, AO4800 Datasheet

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AO4800

Manufacturer Part Number
AO4800
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha Industries
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800 uses advanced trench technology to
provide excellent R
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters.
S2
G2
S1
G1
A
SOIC-8
1
2
3
4
8
7
6
5
DS(ON)
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. The
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
DS
GS
D
J
, T
STG
G1
Symbol
Features
V
I
R
R
R
R
D
R
D1
S1
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 6.9A
(V) = 30V
< 27mΩ (V
< 32mΩ (V
< 50mΩ (V
Maximum
-55 to 150
G2
1.44
Typ
±12
6.9
5.8
30
40
48
74
35
2
GS
GS
GS
D2
S2
= 10V)
= 4.5V)
= 2.5V)
Max
62.5
110
40
July 2001
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4800 Summary of contents

Page 1

... AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800 uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters ...

Page 2

... AO4800 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 3V 25 4. (Volts) DS Fig 1: On-Region Characteristics 60 V =2. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...

Page 4

... AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & ...

Page 5

... LG - AOS LOGO PARTN - PART NUMBER CODE FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE PART NO. CODE AO4400 4400 AO4800 4800 AO4401 4401 AO4801 4801 SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS MIN NOM A 1.45 1.50 A1 0.00 A2 1.45 0. ...

Page 6

ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

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