SM6T General Semiconductor, SM6T Datasheet - Page 3

• Manufacturer Part Number: SM6T
• Description: TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
• Manufacturer: General Semiconductor

100
6,000
1,000
1.0
0.1
100
150
10
100
50
0.1 s
10
0
0
1
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
0.2 x 0.2” (0.5 x 0.5mm)
COPPER PAD AREAS
V
WM,
FIG. 1 - PEAK PULSE POWER RATING CURVE
td
1.0 s
MEASURED at
STAND-OFF
VOLTAGE, V
tr=10 sec.
REVERSE STAND-OFF VOLTAGE,
PEAK VALUE
I
PPM
RATINGS AND CHARACTERISTICS CURVES SM6T SERIES
1.0
BIDIRECTIONAL
FIG. 3 - PULSE WAVEFORM
td, PULSE WIDTH, sec.
WM
10
VOLTS
10 s
HALF VALUE - I
t, TIME, ms
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of I
MEASURED at
ZERO BIAS
2.0
100 s
T
f=1.0 MH
Vsig=50mVp-p
J
PP
2
10/1000 sec. WAVEFORM
as DEFINED by R.E.A.
=25° C
100 200
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG. 3
T
A
=25°C
Z
3.0
1.0ms
PPM
10ms
4.0
200
100
10
100
75
50
25
0
1
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
0
6,000
1,000
100
10
25
1
V
FIG. 2 - PULSE DERATING CURVE
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
WM
T
A
50
NUMBER OF CYCLES AT 60 H
, AMBIENT TEMPERATURE, °C
, REVERSE STAND-OFF VOLTAGE, VOLTS
SURGE CURRENT
75
MEASURED at
STAND-OFF
VOLTAGE, V
UNIDIRECTIONAL
100
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
UNIDIRECTIONAL ONLY
10
10
WM
125
150
MEASURED at
ZERO BIAS
T
f=1.0 MH
Vsig=50mVp-p
J
Z
=25° C
175
100 200
Z
200
100