XN05601 Panasonic Semiconductor, XN05601 Datasheet

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XN05601

Manufacturer Part Number
XN05601
Description
Silicon PNP epitaxial planer transistor
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
XN0560100L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Composite Transistors
XN5601
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Tr1
Tr2
Overall
Features
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SB709A+2SD601A
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
V
V
V
V
V
T
I
I
P
T
CBO
I
CBO
I
CEO
EBO
CEO
EBO
CP
CP
stg
C
C
T
j
(Ta=25˚C)
–55 to +150
Ratings
–100
–200
–60
–50
100
200
300
150
–7
60
50
7
Unit
mW
mA
mA
mA
mA
˚C
˚C
V
V
V
V
V
V
Marking Symbol:
Internal Connection
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
0.65 0.15
0.1 to 0.3
0.4 0.2
6
5
4
6
5
4
4N
Tr1
Tr2
2.8
1.5
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
+0.2
–0.3
+0.25
–0.05
1
2
3
1
2
3
0.65 0.15
Unit: mm
1

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XN05601 Summary of contents

Page 1

Composite Transistors XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification Features Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Basic Part Number of ...

Page 2

Composite Transistors Electrical Characteristics Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Tr2 Parameter Collector to base ...

Page 3

Composite Transistors Common characteristics chart P — 500 400 300 200 100 120 160 Ambient temperature Ta ( ˚C ) Characteristics charts of Tr1 I — –60 Ta=25˚C I =–300 A ...

Page 4

Composite Transistors f — 160 V =–10V CB Ta=25˚C 140 120 100 0.1 0 100 ( mA ) Emitter current — ...

Page 5

Composite Transistors I — 240 V =10V CE Ta=25˚C 200 160 120 200 400 600 800 1000 ( A ) Base current — 300 V =10V CB ...

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