AON7401 Alpha & Omega Semiconductors, AON7401 Datasheet - Page 2

• Manufacturer Part Number: AON7401
• Description: 30V P-Channel MOSFET
• Manufacturer: Alpha & Omega Semiconductors

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Rev 4: Mar. 2011
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150° C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150° C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25° C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a single pulse rating .
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
(10V)
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
Parameter
J
=25° C unless otherwise noted)
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Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-9A, dI/dt=500A/ s
=-9A, dI/dt=500A/ s
=-250 A, V
=-1A,V
GEN
=-30V, V
=0V, V
=V
=-10V, V
=-10V, I
=-6V, I
=-5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3
GS
GS
I
D
GS
D
D
DS
DS
=0V
=-250 A
=-7A
=-9A
D
GS
= ±25V
DS
=-15V, f=1MHz
=0V, f=1MHz
DS
DS
=-9A
GS
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
T
=-9A
L
T
J
=1.6 ,
=125° C
J
=55° C
Min
-1.7
-30
-80
2060
12.9
Typ
-2.2
-0.7
370
295
16
2.4
4.6
9.4
11
27
30
10
11
24
12
14
35
±100
2600
Max
19
AON7401
-25
3.6
-5
14
17
39
18
-1
-3
-1
Page 2 of 5
Units
m
m
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A
Datasheet pdf - http://www.DataSheet4U.net/