SI9933CDY Vishay, SI9933CDY Datasheet - Page 4

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SI9933CDY

Manufacturer Part Number
SI9933CDY
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
75
0.01
100
0.8
0.1
10
1
I
0.1
D
100
= 250 µA
Safe Operating Area, Junction-to-Ambient
T
* V
J
Single Pulse
Limited by R
= 25 °C
T
1.0
GS
A
125
= 25 °C
> minimum V
V
New Product
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0
is specified
0 .
0
1 ms
10 ms
100 ms
1 s
10 s
DC
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
6
S-81729-Rev. A, 04-Aug-08
Document Number: 68791
8
I
1
D
T
J
= - 4.8 A
T
J
= 25 °C
10
= 125 °C
12
10

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