SI9945BDY Vishay, SI9945BDY Datasheet
SI9945BDY
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SI9945BDY Summary of contents
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... Top View Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...
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... Si9945BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product 1.2 1.4 1.6 1.8 2.0 1000 Si9945BDY Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 ...
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... Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.11 0.10 0.09 0.08 0. °C J 0.06 0.05 0.04 0.8 1.0 1.2 1 250 µ 100 125 150 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64737 S09-0321-Rev. A, 02-Mar-09 New Product 100 125 150 0.0001 0.001 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9945BDY Vishay Siliconix 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ...
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... Si9945BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...