BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 7

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
TOPFET
0.5
Conditions: V
Fig.12. Typical overload protection characteristics.
Fig.14. Typical overload protection characteristics.
1
0
120
100
Fig.13. Normalised limiting overload dissipation.
100
80
60
40
20
0.1
-60
10
0
Energy & Time
1
t
-60
d sc
0.01
PDSM%
td sc / ms
P
= f(P
-40
DSM
-20
% =100 P
DS
-20
DD
); conditions: V
= 13 V; V
20
0
DSM
Time / ms
Energy / J
20
60
/P
PDS / kW
Tmb / C
IS
Tmb / C
40
DSM
= 10 V; SC load = 30 m
0.1
100
IS
(25 ˚C) = f(T
60
5 V; T
140
80
Tj(TO)
100
j
BUK108-50GS
= 25 ˚C.
180
BUK108-50GS
mb
PDSM
120
)
140
220
1
7
Fig.17. Typical DC input characteristics, T
1.0
0.5
20
15
10
Fig.15. Typical clamping characteristics, 25 ˚C.
0
5
0
V
50
0
II / mA
ID / A
I
IS(TO)
2
1
0
D
-60
= f(V
VIS(TO) / V
= f(T
Fig.16. Input threshold voltage.
-40
2
DS
I
IS
); conditions: V
-20
j
= f(V
); conditions: I
4
0
IS
); normal operation
20
6
max.
VDS / V
min.
typ.
VIS / V
40
Tj / C
60
IS
D
60
8
= 1 mA; V
= 0 V; t
BUK108-50GS
80
Product specification
typ.
100 120 140
10
p
BUK108-50GS
BUK108-50GS
DS
50 s
= 5 V
12
j
Rev 1.000
= 25 ˚C.
70
14