BUK854-800A Philips Semiconductors, BUK854-800A Datasheet - Page 2

• Manufacturer Part Number: BUK854-800A
• Description: Insulated Gate Bipolar Transistor IGBT
• Manufacturer: Philips Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1994
Insulated Gate Bipolar Transistor (IGBT)
mb
SYMBOL PARAMETER
V
V
I
I
I
I
V
mb
SYMBOL PARAMETER
g
C
C
C
t
t
E
t
t
E
t
t
E
t
t
E
CES
CES
ECS
GES
d on
r
d off
f
d on
r
d off
f
fe
(BR)CES
GE(TO)
CEsat
on
off
on
off
ies
oes
res
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
Collector-emitter breakdown
voltage
Gate threshold voltage
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Gate emitter leakage current
Collector-emitter saturation
voltage
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
CONDITIONS
V
V
V
V
V
V
V
V
CONDITIONS
V
V
I
V
T
Inductive Load
Energy Losses include all ’tail’
losses
I
V
T
Inductive Load
Energy Losses include all ’tail’
losses
C
C
j
j
GE
CE
CE
CE
CE
GE
GE
GE
CE
GE
GE
GE
= 6 A; V
= 6 A; V
= 25˚C;
= 125˚C;
= V
= 800 V; V
= 800 V; V
= -5 V; V
= 15 V; I
= 0 V; I
= 30 V; V
= 15 V; I
= 15 V; I
= 0 V; V
= 15 V; R
= 15 V; R
GE
; I
CC
CC
2
C
C
CE
C
C
C
= 0.25 mA
= 1 mA
GE
= 500 V;
= 500 V;
G
G
= 6 A
= 12 A
= 3 A
GE
GE
CE
= 25 V; f = 1 MHz
= 25 ;
= 25 ;
= 0 V
= 0 V; T
= 0 V; T
= 0 V
j
j
= 25 ˚C
=125 ˚C
MIN.
MIN.
800
1.5
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
0.25
0.25
0.25
400
170
200
200
400
0.1
0.1
2.4
3.1
0.5
10
10
45
15
20
30
20
30
4
4
Product Specification
BUK854-800A
-
MAX.
MAX.
100
100
750
270
400
350
800
5.5
3.5
0.5
80
40
1
5
1
-
-
-
-
-
-
-
-
-
Rev.1.100
UNIT
UNIT
mA
mA
mJ
mJ
mJ
mJ
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
S
A