BUK9515 Philips Semiconductors, BUK9515 Datasheet - Page 6

• Manufacturer Part Number: BUK9515
• Description: TrenchMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
December 1998
TrenchMOS
Logic level FET
Fig.14. Typical turn-on gate-charge characteristics.
VGS/V
V
20
15
10
ID/A
I
5
0
0.01
GS
100
F
Fig.13. Typical capacitances, C
80
60
40
20
C = f(V
6
5
4
3
2
1
0
0
= f(V
0
= f(Q
0
Fig.15. Typical reverse diode current.
0.1
10
SDS
G
DS
); conditions: I
); conditions: V
0.2
20
); conditions: V
0.1
0.3
30
VDS =
transistor
0.4
40
Tj/C =
0.5
1
50
14V
D
GS
= 25 A; parameter V
0.6
VDS/V
GS
60
VSDS/V
QG/nC
175
= 0 V; parameter T
= 0 V; f = 1 MHz
0.7
70
80V
10
0.8
iss
80
, C
0.9
90
oss
25
, C
100
1
100
rss
1.1
Ciss
Coss
Crss
.
110
DS
j
6
VGS
0
VGS
0
Fig.16. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.17. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
Fig.18. Switching test circuit.
DSS
40
% = f(T
RGS
0.5 LI
60
RG
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
RD
VDS
120
BV
T.U.T.
VDS
T.U.T.
BUK9515-100A
Product specification
DSS
140
D
shunt
= 75 A
R 01
V
DD
160
-
+
-
+
Rev 1.100
-ID/100
180
VDD
VDD