BUK9535-55 Philips Semiconductors, BUK9535-55 Datasheet

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BUK9535-55

Manufacturer Part Number
BUK9535-55
Description
TrenchMOS transistor Logic level FET
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
envelope
gate
drain
source
drain
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
using
transistor
’trench’
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 5 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
175
55
34
85
35
MAX.
MAX.
MAX.
1.75
136
175
55
55
10
34
24
85
2
BUK9535-55
-
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK9535-55 Summary of contents

Page 1

... PIN CONFIGURATION tab CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK9535-55 MAX 175 SYMBOL MIN. MAX. UNIT - 136 - 85 ...

Page 2

... Measured from source lead 6 mm from package to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9535-55 MIN. TYP. MAX. UNIT 1 0 2.3 - 0.05 ...

Page 3

... ID/A 100 10 120 140 160 180 f & 0.1 0.01 120 140 160 180 Product specification BUK9535-55 MIN. TYP. MAX ˚C mb RDS(ON) = VDS/ VDS/V Fig.3. Safe operating area ˚ f single pulse; parameter ZTH/ (K/W) 1 0.5 0.2 0 ...

Page 4

... Fig.9. Normalised drain-source on-state resistance VGS(TO 2.5 2 1.5 1 0.5 0 -100 GS(TO) 4 Product specification BUK9535- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC a - 100 150 Tmb / degC / DS(ON) DS(ON)25 ˚ ...

Page 5

... Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK9535-55 Tj/C = 175 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS ...

Page 6

... Philips Semiconductors TrenchMOS transistor Logic level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK9535-55 Rev 1.100 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9535-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK9535-55 Rev 1.100 ...

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