GWM120-0075X1 IXYS Corporation, GWM120-0075X1 Datasheet
GWM120-0075X1
Manufacturer Part Number
GWM120-0075X1
Description
Three phase full Bridge
Manufacturer
IXYS Corporation
Datasheet
1.GWM120-0075X1.pdf
(6 pages)
www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
MOSFETs
Symbol
V
V
I
I
I
I
DSS
GSS
D25
D90
F25
F90
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
DSS
DSon
thJC
thJH
g
gs
gd
Conditions
on chip level at
V
V
V
V
V
V
I
inductive load
with heat transfer paste (IXYS test setup)
Conditions
T
T
T
T
T
D
GS
GS
GS
GS
VJ
C
C
C
C
DS
DS
= 80 A; R
= 25°C
= 90°C
= 25°C (diode)
= 90°C (diode)
= 25°C to 150°C
= V
= 10 V ; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= 10 V; V
DSS
; V
G
D
D
GS
DS
DS
= 39 Ω
= 60 A
= 1 mA
DS
= 0 V
= 36 V; I
= 30 V
= 0 V
D
= 25 A
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
(T
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
G1
S1
G2
S2
VJ
= 25°C, unless otherwise specified)
min.
G3
S3
G4
S4
2
Characteristic Values
Maximum Ratings
0.20
0.50
0.01
typ.
115
130
100
500
100
4.0
7.2
0.1
1.3
30
30
G5
S5
G6
S6
max.
± 20
110
110
4.9
8.4
0.2
1.0
1.6
75
85
80
4
1
K/W
K/W
mW
mW
mA
mJ
mJ
mJ
nC
nC
nC
µA
µA
ns
ns
ns
ns
L+
L1
L2
L3
L-
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 2 lead forms available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low RDSon
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
DSS
DSon typ.
connections
with optimized heat transfer
Straight leads
GWM 120-0075X1
= 75 V
= 110 A
= 4.0 mW
Surface Mount Device
20110407d
1 - 6
Datasheet pdf - http://www.DataSheet4U.net/
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GWM120-0075X1 Summary of contents
Page 1
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MOSFETs Symbol Conditions 25°C to 150°C DSS 25°C D25 90°C D90 C I ...
Page 2
Source-Drain Diode Symbol Conditions V (diode -di /dt = 800 A/µ 125° ...
Page 3
S Leads Ordering Packing Unit Marking Straight Standard GWM 120-0075X1 - SL SMD Standard GWM 120-0075X1 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved S L traight eads ...
Page 4
I = 0.25 mA DSS 1,1 1,0 0,9 0,8 0,7 - Fig. 1 Drain source breakdown voltage V vs. junction temperature T 300 250 ...
Page 5
I = 125 25° Fig.7 Gate charge characteristic 0 ...
Page 6
125° 400 600 800 -di F Fig. 13 Reverse recovery time t of the body diode vs. di/ ...