HAT1047R Renesas Technology, HAT1047R Datasheet - Page 2

• Manufacturer Part Number: HAT1047R
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Renesas Technology

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HAT1047R, HAT1047RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current HAT1047R
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.5.00, Aug.27.2003, page 2 of 9
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
3. Value at Tch = 25°C, Rg
10 s, duty cycle
HAT1047RJ
HAT1047R
HAT1047RJ
1 %
50
E
Tstg
Symbol
V
V
I
I
I
I
Pch
Tch
D
D(pulse)
DR
AP
DSS
GSS
AR
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Note3
Note3
Note2
Note1
Ratings
–30
±20
–14
–112
–14
—
–14
—
19.6
2.5
150
–55 to +150
10s
Unit
V
V
A
A
A
—
A
—
mJ
W
°C
°C