HAT2025R Hitachi Semiconductor, HAT2025R Datasheet - Page 4

• Manufacturer Part Number: HAT2025R
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2025R
4
0.20
0.16
0.12
0.08
0.04
100
–40
80
60
40
20
0
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
V
Pulse Test
Gate to Source Voltage
GS
10 V
Case Temperature
4.5 V
= 4 V
2
0
Gate to Source Voltage
vs. Temperature
40
4
I = 5 A
D
80
6
5 A
5, 2, 1 A
I
Pulse Test
Tc
D
V
120
= 5 A
8
GS
2, 1 A
1 A
2 A
(°C)
2, 1 A
(V)
160
10
500
200
100
0.5
50
20
10
50
20
10
5
5
2
1
Static Drain to Source on State Resistance
0.2
0.2
Pulse Test
Forward Transfer Admittance vs.
0.5
0.5
Drain Current
Drain Current I
vs. Drain Current
25 °C
Tc = –25 °C
1
1
Drain Current
2
2
V
75 °C
GS
I
V
Pulse Test
= 10 V
D
4.5 V
D
5
DS
5
4 V
(A)
(A)
= 10 V
10
10
20
20