HAT2087R Renesas Technology, HAT2087R Datasheet - Page 2

• Manufacturer Part Number: HAT2087R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2087R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 3
2. When using the glass epoxy board (FR4 40
3. Pulse test
10 s, duty cycle
Item
Item
1%
V
Symbol
V
R
Coss
(BR) DSS
Crss
t
t
Ciss
Qgs
Qgd
I
I
GS (off)
DS (on)
V
|y
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Symbol
40
Min
250
3.0
2.1
V
V
Tstg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Tch
I
DSS
GSS
I
DR
D
Note 2
Note 1
1.6 mm), PW
0.24
22.5
12.5
10.4
0.75
Typ
830
105
3.5
3.2
21
82
17
23
88
—
—
—
—
Max
0.31
1.15
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
1
10 s
–55 to +150
Value
250
150
Unit
2.5
2.5
2.5
20
nC
nC
nC
30
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
I
I
I
V
V
f = 1 MHz
V
V
R
Rg = 10
V
V
I
I
I
di
D
D
D
D
D
F
F
GS
DS
DS
GS
DD
GS
DD
GS
L
F
= 2.5 A, V
= 2.5 A, V
= 10 mA, V
= 1 mA, V
= 1.25 A, V
= 1.25 A, V
= 2.5 A
/dt = 100 A/ s
= 100
= 30 V, V
= 250 V, V
= 25 V
= 0
= 125 V, I
= 10 V
= 200 V
= 10 V
Test Conditions
GS
GS
DS
GS
GS
DS
D
GS
DS
= 0
= 0
= 10 V
= 1.25 A
Unit
= 0
= 10 V
= 10 V
(Ta = 25 C)
(Ta = 25 C)
W
V
V
A
A
A
= 0
= 0
C
C
Note 3
Note 3
Note 3